A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1293-1302

  Palestri, P ^a   Alexander, C ^b   Asenov, A ^b   Aubry Fortuna, V ^d   Baccarani, G ^c   Bournel, A ^d   Braccioli, M ^e   Cheng, B ^b   Dollfus, P ^d   Esposito, A ^f   Esseni, D ^a   Fenouillet Beranger, C ^j,k   Fiegna, C ^e   Fiori, G ^h   Ghetti, A ^g   Iannaccone, G ^h   Martinez, A ^b   Majkusiak, B ⁱ   Monfray, S ^j   Peikert, V ^f   Reggiani, S ^c   Riddet, C ^b   Saint Martin, J ^d   Sangiorgi, E ^e   Schenk, A ^f   Selmi, L ^a   Silvestri, L ^c   Toniutti, P ^a   Walczak, J ⁱ   more..

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d CNRS   (France)

^e UNIVERSITY OF BOLOGNA   (Italy)

^f ETH ZURICH   (Switzerland)

^g Numonyx   (Italy)

^h UNIVERSITY OF PISA   (Italy)

ⁱ WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^j STMICROELECTRONICS   (France)

^k MINATEC   (France)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED MODELING; BOLTZMANN; DIRECT SOLUTION; DOUBLE-GATE; DRIFT DIFFUSION; EXPERIMENTAL DATA; FULLY DEPLETED SILICON-ON-INSULATOR; LOW FIELD MOBILITY; MOBILITY MODEL; MOBILITY REDUCTION; MODELING APPROACH; NANO SCALE; NANOSCALE MOSFETS; NMOSFETS; QUANTITATIVE PREDICTION; SILICON CHANNEL; SUBTHRESHOLD; TRANSPORT MODELS;

BOLTZMANN EQUATION; DIELECTRIC MATERIALS; FORECASTING; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SILICON COMPOUNDS; SILICON OXIDES; SIMULATORS;

DRAIN CURRENT;

EID: 71649111813     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.019     Document Type: Article

References (60)

1. International Technology Roadmap for Semiconductor; 2007. .
2. Jacoboni C., and Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55 (1983) 645-705
3. Datta S. The non-equilibrium Green's function (NEGF) formalism: an elementary introduction. In: IEDM technical digest; 2002. p. 703-6.
4. Fischetti M.V., and Laux S.E. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Phys Rev B 38 (1988) 9721-9745
5. Venturi F., Smith R.K., Sangiorgi E., Pinto M.R., and Riccò B. A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. IEEE Trans Comput-Aided Design 8 4 (1989) 360-369
6. Jungemann C., Keith S., Bartels M., and Meinerzhagen B. Efficient full-band Monte Carlo simulation of silicon devices. IEICE Trans Electron E82-C (1999) 870-879
7. Ferry DK, Akis R, Vasileska D. Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices. In: IEDM technical digest; 2000. p. 287-90.
8. Winstead B., and Ravaioli U. A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation. IEEE Trans Electron Dev 50 2 (2003) 440-446
9. Sampedro-Matarin C., Gamiz F., Godoy A., and Ruiz F.J.G. The Multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures. IEEE Trans Electron Dev 53 (2006) 2703-2710
10. Fischetti M.V., and Laux S.E. Monte Carlo study of electron transport in silicon inversion layers. Phys Rev B 48 (1993) 2244-2274
11. Jungemann C., Edmunds A., and Engl W.L. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid State Electron 36 11 (1993) 1529-1540
12. Gamiz F., Lopez-Villanueva J.A., Roldan J.B., Carceller J.E., and Cartujo P. Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFETs. IEEE Trans Electron Dev 45 5 (1998) 1122-1126
13. Querlioz D, Saint-Martin J, Do V-N, Bournel A, Dollfus P. Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach. In: IEDM technical digest; 2006. p. 941-4.
14. Sverdlov V., Gehring A.G., Kosina H., and Selberherr S. Quantum transport in ultra-scaled double-gate MOSFETs: a Wigner function-based Monte Carlo approach. Solid State Electron 49 (2005) 1510-1515
15. Abramo A., Baudry L., Brunetti R., Castagne R., Charef M., Dessenne F., et al. A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport in silicon. IEEE Trans Electron Dev 41 (1994) 1646-1654
16. Richter C.A., Hefner A.R., and Vogel E.M. A comparison of quantum-mechanical capacitance-voltage simulators. IEEE Electron Dev Lett 22 1 (2001) 35-37
17. Palestri P., Barin N., Brunel D., Busseret C., Campera A., Childs P.A., et al. Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacks. IEEE Trans Electron Dev 54 1 (2007) 106-114
18. Fiegna C, Braccioli M, Brugger SC, Bufler FM, Dollfus P, Aubry-Fortuna V, et al. Comparison of Monte Carlo transport models for nanometer-size MOSFETs. In: Proceedings SISPAD; 2007. p. 57-60.
19. Takagi S., Toriumi A., Iwase M., and Tango H. On the universality of inversion-layer mobility in Si MOSFETs. Part I - effect of substrate impurity concentration. IEEE Trans Electron Dev 41 12 (1994) 2357-2362
20. Lucci L., Palestri P., Esseni D., Bergagnini L., and Selmi L. Multi-subband Monte-Carlo study of transport, quantization and electron gas degeneration in ultra-thin SOI n-MOSFETs. IEEE Trans Electron Dev 54 5 (2007) 1156-1164
21. Ando T., Fowler A., and Stern F. Electronic properties of two-dimensional systems. Rev Modern Phys 54 (1982) 437
22. Lucci L, Bescond M, Clerc R, Palestri P, Esseni D, Selmi L, et al. Analysis of transport properties of nanoscale SOI devices: full quantum versus semi classical models. In: Proceedings EUROSOI; 2007. p. 43-4.
23. Esseni D. On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field. IEEE Trans Electron Dev 51 3 (2004) 394-401
24. Toniutti P, Palestri P, Esseni D, Selmi L. Revised analysis of the mobility and Ion degradation in high-k gate stacks: surface optical phonons vs. remote Coulomb scattering. In: ESSDERC; 2008. p. 246-9.
25. Palestri P., Eminente S., Esseni D., Fiegna C., Sangiorgi E., and Selmi L. An improved semiclassical Monte-Carlo approach for nano-scale MOSFET simulation. Solid State Electron 49 (2005) 727-732
26. Palestri P., Esseni D., Eminente S., Fiegna C., Sangiorgi E., and Selmi L. Understanding quasi-ballistic transport in nano-MOSFETs. Part I: scattering in the channel and in the drain. IEEE Trans Electron Dev 52 12 (2005) 2727-2735
27. Brugger S. Computation of semiconductor properties using moments of the inverse scattering operator of the Boltzmann equation. Ser Microelectron 166 (2007)
28. Bufler F., Schenk A., and Fichtner W. Efficient Monte Carlo device modeling. IEEE Trans Electron Dev 47 10 (2000) 1891-1897
29. Ghetti A, Rideau D. 3D Monte Carlo device simulation of nanowire MOSFETs including quantum mechanical and strain effects. In: Proceedings SISPAD; 2006. p. 67.
30. Rideau D., Feraille M., Ciampolini L., Minondo M., Tavernier C., Jaouen H., et al. Si, Ge, and Si[1 - x]Ge[x] alloys modeled with a first-principles-optimized full-zone k.p method. Phys Rev B 74 (2006) 195208
31. Pham A., Nguyen C., Jungemann C., and Meinerzhagen B. A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGE nMOSFETS. Solid State Electron 50 (2006) 694-700
32. Ghetti A. Calibration of hole scattering rates in silicon with a large set of experimental data including high voltage quantum yield, drain disturb and substrate hole injection. In: Proceedings SISPAD; 2003. p. 71.
33. Fantini P, Ghetti A, Carnevale G, Bonera E, Rideau D. A full self-consistent methodology for strain-induced effects characterization in silicon devices. In: IEDM technical digest; 2005. p. 1013.
34. Querlioz D., Saint-Martin J., Huet K., Bournel A., Aubry-Fortuna V., Chassat C., et al. On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation. IEEE Trans Electron Dev 54 9 (2007) 2232-2242
35. Aubry-Fortuna V., Bournel A., Dollfus P., and Galdin-Retailleau S. Ultra-short n-MOSFETs with strained Si: device performance and effect of ballistic transport using Monte Carlo simulation. Semicond Sci Technol 21 (2006) 422-428
36. Alexander CL, Roy G, Asenov A. Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs. In: IEDM technical digest; 2006.
37. Riddet C, Asenov A. Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo simulations. In: Proceedings simulation of semiconductor processes and devices; 2008. p. 261-4.
38. Baccarani G., Gnani E., Gnudi A., Reggiani S., and Rudan M. Theoretical foundations of the quantum drift-diffusion and density-gradient models. Solid State Electron 52 4 (2008) 526-532
39. Reggiani S, Silvestri L, Cacciatori A, Gnani E, Gnudi A, Baccarani G. Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions. In: IEDM technical digest; 2007.
40. Silvestri L, Reggiani S, Gnani E, Gnudi A, Baccarani G. Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation. In: Proceedings ULIS; 2008, p. 129-32.
41. Caughey D.M., and Thomas R.E. Carrier mobilities in silicon empirically related to doping and field. Proc IEEE 55 12 (1967) 2192-2193
42. Asenov A., Brown A.R., Davies J.H., Kaya S., and Slavcheva G.M. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs. IEEE Trans Electron Dev 50 9 (2003) 1837-1852
43. Roy G., Brown A.R., Adamu-Lema F., Roy S., and Asenov A. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Trans Electron Dev 53 12 (2006) 3063-3070
44. DESSIS-ISE release 8.0. Integrated systems engineering AG, Zurich, Switzerland; 2002.
45. Curatola G., Doornbos G., Loo J., Ponomarev Y., and Iannaccone G. Detailed modeling of sub-100-nm MOSFETs based on Schrdinger DD per subband and experiments and evaluation of the performance gap to ballistic transport. IEEE Trans Electron Dev 52 (2005) 1851-1858
46. Fiori G., and Iannaccone G. Three-dimensional simulation of one-dimensional transport in silicon nanowire transistors. IEEE Trans Nanotechnol 6 (2007) 524-529
47. Reggiani S., Gnani E., Gnudi A., Rudan M., and Baccarani G. Low-field electron mobility model for ultrathin-body SOI and double-gate MOSFETs with extremely small silicon thicknesses. IEEE Trans Electron Dev 54 (2007) 2204-2212
48. Darwish M., Lentz J., Pinto M., Zeitzoff P., Krutsick T., and Vuong H.H. An improved electron and hole mobility model for general purpose device simulation. IEEE Trans Electron Dev 44 (1997) 1529-1538
49. Martinez A., Bescond M., Barker J.R., Svizhenko A., Anantram M.P., Millar C., et al. A self-consistent fully 3-d real-space NEGF simulator for studying Nonpertubative effects in nano-MOSFETs. IEEE Trans Electron Dev 54 9 (2007) 2213-2222
50. Svizhenko A., Anantram M.P., Govindan T.R., Biegel B., and Venugopal R. Two-dimensional quantum mechanical modeling of nanotransistors. J Appl Phys 91 (2002) 2343-2354
51. Jin S., Fischetti M., and Tang T.-W. Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs. IEEE Trans Electron Dev 54 9 (2007) 2197-2203
52. Walczak J., and Majkusiak B. Theoretical study of electron mobility in double-gate field effect transistors with multilayer (strained-)Si/SiGe channel. J Semicond Technol Sci 8 3 (2008) 264-275
53. Esseni D., and Abramo A. Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs. IEEE Trans Electron Dev 50 7 (2003) 1665-1674
54. Fischetti M.V., Neumayer D.A., and Cartier E.A. Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-kappa insulator: the role of remote phonon scattering. J Appl Phys 90 (2001) 4587-4608
55. 2/metal gate MOSFETs: physical insight into critical parameters. IEEE Trans Electron Dev 53 (2006) 759-768
56. Jungemann Chr., Grasser T., Neinhuus B., and Meinerzhagen B. Failure of moments-based transport models in nanoscale devices near equilibrium. IEEE Trans Electron Dev 52 (2005) 2404-2408
57. Lundstrom M., and Ren Z. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans Electron Dev 49 1 (2002) 133-141
58. Eminente S., Barin N., Palestri P., Fiegna C., and Sangiorgi E. Small-signal analysis of deca-nanometer bulk and SOI MOSFETs for analog/mixed-signal and RF applications using the time-dependent Monte Carlo approach. IEEE Trans Electron Dev 54 9 (2007) 2283-2292
59. Riolino I., Braccioli M., Lucci L., Palestri P., Esseni D., Fiegna C., et al. Monte-Carlo simulation of decananometric nMOSFETs: multi-subband vs. 3D-electron gas with quantum corrections. Solid State Electron 51 (2007) 1558-1564
60. Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, et al. FDSOI devices with thin box and ground plane integration for 32 nm node and below. In: Proceedings ESSDERC; 2008. p. 206-9.