Efficient Monte Carlo device modeling

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1891-1897

  Bufler, F M ^a   Schenk, A ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON SCATTERING; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

BOLTZMANN EQUATION; GATE CURRENTS; IMPURITY SCATTERING;

MOSFET DEVICES;

EID: 0034295825     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870568     Document Type: Article

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