A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 694-700

  Pham, A T ^a   Nguyen, C D ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Monte Carlo method; MOSFET; Strained silicon; Surface scattering

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; MATHEMATICAL MODELS; MONTE CARLO METHODS; MOSFET DEVICES; SILICON ALLOYS;

FBMC MODEL; MOBILITY MEASUREMENTS; NMOSFET; STRAINED SILICON; SURFACE SCATTERINGS;

QUANTUM THEORY;

EID: 33646529459     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.022     Document Type: Article

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