Theoretical foundations of the quantum drift-diffusion and density-gradient models

Solid-State Electronics

Volumn 52, Issue 4, 2008, Pages 526-532

  Baccarani, Giorgio ^a   Gnani, Elena ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Rudan, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Bohm's quantum potential; Density gradient; DG FETs; Quantum drift diffusion; UTB SOI FETs

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; NANOWIRES; SILICON;

BOHM'S THEORY; DENSITY-GRADIENT TRANSPORT; QUANTUM DRIFT-DIFFUSION; QUANTUM POTENTIAL;

QUANTUM THEORY;

EID: 40849102537     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.051     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors (ITRS), 2005 edition. http://public.itrs.net.
2. Ferry D.K., and Zhou J.-R. Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling. Phys Rev B, Condens Matter 48 (1993) 7944-7950
3. Ancona M.G., and Tiersten H.F. Macroscopic physics of the silicon inversion layers. Phys Rev B, Condens Matter 35 (1987) 7959-7965
4. Ancona M.G., and Iafrate G.J. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys Rev B, Condens Matter 39 (1989) 7540-9536
5. Ancona MG and Biegel BA. Non-linear discretization scheme for the density-gradient equations. In: Leon JFP, editor. Proceedings of the SISPAD conference seattle, WA, September 2000, pp. 196-9.
6. Wettstein A. Quantum effects in MOS devices (2000), Hartung-Gorre Verlag, Konstanz
7. Datta S. Nanoscale device simulation: the Green's function formalism. Superlattice Microstruc 28 (2000) 253-278
8. Lundstrom M., and Ren Z. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans Electr Dev 49 1 (2002) 133-141
9. Ren Z., Venugopal R., Goasguen S., Datta S., and Lundstrom M.S. Nano MOS 2.5: a two-dimensional simulator for quantum transport in double-gate MOSFETs. IEEE Trans Electr Dev 50 9 (2003) 1914-1925
10. Bohm D. A suggested interpretation of the quantum theory in terms of hidden variables. I. Phys. Rev. 85 (1952) 166-179
11. Bohm D. A suggested interpretation of the quantum theory in terms of hidden variables. II. Phys Rev 85 (1952) 180-193
12. Rudan M., Reggiani S., Gnani E., and Baccarani G. A coherent extension of the transport equations in semiconductors incorporating the quantum correction - part I: single particle dynamics. IEEE Trans Nanotechnol 4 (2005) 503-509
13. Scharfetter D.L., and Gummel H.K. Large-signal analysis of a silicon Read diode oscillator. IEEE Trans Electr Dev ED-16 (1969) 64-67
14. Sentaurus Device Version X-2005.10 - User's Manual, Synopsys, 2005.
15. Eminente S., Esseni D., Palestri P., Fiegna C., Selmi L., and Sangiorgi E. Understanding quasi-ballistics transport in nano-MOSFETS: Part II - technology scaling along the ITRS. IEEE Trans Electr Dev 52 12 (2005) 2736-2743
16. Bank R.E., and Rose D.J. Global approximate newton methods. Numerische Mathematik 37 (1981) 279-295
17. Saint-Martin J., Bournel A., Monsef F., Chassat C., and Dollfus P. Multi sub-band Monte Carlo simulation of an ultra-thin double-gate MOSFET with 2D electron gas. Semiconduc Sci Technol 21 (2006) 29-31