Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 129-132

  Silvestri, L ^a   Reggiani, S ^a   Gnani, E ^a   Gnudi, A ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; MOSFET DEVICES; NONMETALS; POWDERS; QUANTUM CHEMISTRY; SEMICONDUCTOR DOPING; SILICON;

EFFECTIVE MASSES; FLOW DIRECTIONS; INTERNATIONAL CONFERENCES; MOSFETS; QUANTUM DRIFT-DIFFUSION; REPOPULATION; SCATTERING RATES; SILICON-ON -INSULATOR; SOI-MOSFET; SOI-MOSFETS; SUBSTRATE ORIENTATIONS; UNIFIED MODELING;

CRYSTAL ORIENTATION;

EID: 49049088585     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527156     Document Type: Conference Paper

References (15)

1. R. Ohba et al., IEEE TED 48, p. 338, 2001.
2. S. E. Thompson et al. IEDM Tech. Dig. 2006, p. 1.
3. M. Yang et al., IEEE TED 53. p. 965, 2006.
4. B. Yu et al., IEDM Tech. Dig. 2002. p. 251.
5. J. Kavalieros et al., VLSI Symp. 2005, p. 62.
6. A. Rahman et al., J. Appl. Phys. 97, p. 053702. 2005.
7. S. Reggiani et al., IEEE TED 54, p. 2204, 2007.
8. S. Takagi et al., IEEE TED 41, p. 2363, 1994.
9. B. Goebel et al., IEEE TED 48, p. 897, 2001.
10. K. Uchida et al., IEDM Tech. Dig. 2006, p. 1.
11. K. Uchida et al., IEDM Tech. Dig. 2003, p.805.
12. G. Tsutsui et al., IEDM Tech. Dig. 2005. p. 1.
13. G. Baccarani et al., Solid-State Electron. 2007, doi: 10.1016/j.sse.2007.10.051.
14. D. M. Caughey et al., Proc. of IEEE 55, p. 2192, 1967.
15. S. Dhar et al., IEEE TED 53. p. 5024, 2006.