Three-dimensional simulation of one-dimensional transport in silicon nanowire transistors

IEEE Transactions on Nanotechnology

Volumn 6, Issue 5, 2007, Pages 524-529

  Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

1 D subbands; Ballistic transport; Drift diffusion; Poisson Schr dinger; Silicon nanowire transistor; Three dimensional

Indexed keywords

MATHEMATICAL MODELS; NANOWIRES; SCHRODINGER EQUATION; SILICON; THREE DIMENSIONAL; TRANSPORT PROPERTIES;

BARRIER TUNNELING; QUANTUM TUNNELING; SILICON NANOWIRE TRANSISTORS; SUB BAND TRANSPORT;

TRANSISTORS;

EID: 34648857523     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.896844     Document Type: Article

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