Efficient full-band monte carlo simulation of silicon devices

IEICE Transactions on Electronics

Volumn E82-C, Issue 6, 1999, Pages 870-879

  Jungemann, Christoph ^a   Keitr, Stefan ^a   Bartels, Martin ^a   Meinerzhagen, Bernd ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Deep submicron NMOSFET; Drift diffusion; Full band Monte Carlo; Impact ionization; Microscopic relaxation time; Silicon; Velocity overshoot

Indexed keywords

ALGORITHMS; BAND STRUCTURE; COMPUTER SIMULATION; IMPACT IONIZATION; INTERPOLATION; MONTE CARLO METHODS; PARAMETER ESTIMATION; RESPONSE TIME (COMPUTER SYSTEMS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TENSORS; VELOCITY;

DISCRETIZATION ERROR; DRIFT DIFFUSION; FULL BAND MONTE CARLO; PARTICLE SCATTERING; TETRAHEDRAL GRID; VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 0033357461     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (51)

1. T.H. King, P.W. Cook, R.H. Dennard, C.M. Osburn, S.E. Schuster, and H.-N. Yu, l /im MOSFET VLSI technology: Part IV-Hot-electron design constrains, IEEE TYans. Electron Devices, vol.2G, pp.3JG-353, 1979.
2. E. Takeda and N. Suzuki, An empirical model for device degradation due to hot-carrier injection, IEEE Electron Device Lett., vol.4, pp.111-113, 1983.
3. C. Hu, S.O. Tarn, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K.W. Tcrrill, Hot-electron induced MOSFET degradation-Model, monitor, and improvement, IEEE Trans. Electron Devices, vol.32, pp.375-385, 1985.
4. J.Y. Tang, H. Shichijo, K. Hess, and G.J. lafrate, Bandstructure dependent impact ionization in silicon and gallium arsenide, Journal de Physique, vol.42, pp.63-69, 1981.
5. M.V. Fischetti and S.E. Laux, Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects, Phys. Rev. B, vol.38, pp.9721-9745, 1988.
6. K. Hess, ed., Monte Carlo Device Simulation: Full Band and Beyond, Kluwer, Boston, 1991.
7. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dcssenne, P. Dollfus, R. Dutton, W.L. Engl, R. Fauquembergue, C. Fiegna, M.V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J.M. Higman, T. lizuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunukiyo, S.E. Laux, H. Lin, C. Maziar, H. Mizuno, H.J. Peifer, S. Ramaswamy, N. Sano, P.G. Scrobohaci, S. Selberherr, M. Takenaka, T. Tang, J.L. Thobcl, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S. Wang, X. Wang, C. Yao, P.D. Yoder, and A. Yoshii, A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon','' IEEE Trans. Electron Devices, vol.41, pp.1646-1654, 1994.
8. M.V. Fischetti and S.E. Laux, Monte Carlo simulation of electron transport in Si: The first 20 years, Proc. ESSDERC, Bologna, vol.26, pp.813-820, 1996.
9. E. Cartier, M.V. Fischetti, E.A. Eklund, and F.R. McFeely, Impact ionization in silicon, Appl. Phys. Lett., vol.62, pp.3339-3341, 1993.
10. J.D. Bude and M. Mastrapasqua, Impact ionization and distribution functions in sub-micron nMOSFET technologies, IEEE Electron Device Lett., vol.16, pp.439-441, 1995.
11. C. Jungemann, S. Yamaguchi, and H. Goto, On the accuracy and efficiency of substrate current calculations for sub-/m n-MOSFET's, IEEE Electron Device Lett., vol.17, pp.464-466, 1996.
12. C. Jungemann, B. Meinerzhagen, S. Decker, S. Keith, S. Yamaguchi, and H. Goto, Is physically sound and predictive modeling of NMOS substrate currents possible?" SolidState Electron., vol.42, pp.647-655, 1998.
13. S. Keith, C. Jungemann, and B. Meinerzhagen, Full band Monte Carlo device simulation of 0.1-0.5 ^im strained-Si P-MOSFETs, Proc. ESSDERC, Bordeaux, 1998, pp.312315.
14. C. Jungemann, S. Keith, and B. Meinerzhagen, Full-band Monte Carlo simulation of a 0.12/im-Si-PMOSFET with and without a strained SiGe-channel, Tech. Dig. IEDM, San Francisco (USA), pp.897-900, 1998.
15. R. K. Smith and J. Bude, Highly efficient full band Monte Carlo simulations, Proc. International Workshop on Computational Electronics, Leeds, Aug., pp.224-230, 1993.
16. J. Bude and R.K. Smith, Phase-space simplex Monte -. Carlo for semiconductor transport, Semicond. Sei. Technol., vol.9, pp.840-843, 1994.
17. C. Jungemann, S. Yamaguchi, and H. Goto, Efficient full band Monte Carlo hot carrier simulation for silicon devices, Proc. ESSDERC, Bologna, 1996, vol.26, pp.821-824.
18. J.E. Chung, M.-C. Jeng, J.E. Moon, P.-K. Ko, and C. Hu, Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFET's, IEEE Trans. Electron Devices, vol.37, pp. 1651-1657, 1990.
19. M.V. Fischetti and S.E. Laux, Monte Carlo study of subband-gap impact ionization in small silicon field-effect transistors, IEDM, 1995, pp.305-308.
20. B. Fischer, A. Ghetti, L. Selmi, R. Bez, and E. Sangiorgi, Bias and temperature dependence of homogeneous hotelectron injection from silicon into silicon dioxide at low voltages, IEEE Trans. Electron Devices, vol.44, pp.288296, 1997.
21. R.W. Hockney and J.W. Eastwood, Computer Simulation Using Particles, Institute of Physics Publishing, Bristol, Philadelphia, 1988.
22. J.M. Higman, K. Hess, G.G. Hwang, and R.W. Dutton, Coupled Monte Carlo-drift diffusion analysis of hotelectron effects in MOSFET's, IEEE Trans. Electron Devices, vol.36, pp.930-937, 1989.
23. M.M. Rieger and P. Vogl, Electronic-band parameters in strained Sii_xGex alloys on Sii_yGcy substrates, Phys. Rev. B, vol.48, pp. 14276-14287, 1993.
24. G. Lehmann and M. Taut, On the numerical calculation of the density of states and related properties, Phys. Status Solidi B, vol.54, pp.469-477, 1972.
25. E.X. Wang, M.D. Giles, S. Yu, F.A. Léon, A. Hiroki, and S. Odanaka, Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization, Proc. SISPAD, Tokyo, pp.67-68, 1996.
26. G. Wiesenekker and E. J. Baerends, Quadratic integration over the three-dimensional brillouin zone, J. Phys.: Condens. Matter, vol.3, pp.6721-6742, 1991.
27. R. Thoma, A. Emunds, B. Meinerzhagen, H.J. Peifer, and W.L. Engl, Hydrodynamic equations for semiconductors with nonparabolic bandstructures, IEEE Trans. Electron Devices, vol.38, pp. 1343-1352, 1991.
28. O. Madelung, Introduction to Solid-Statc Theory, Springer, Berlin, 1978.
29. C. Jacoboni and L. Reggiani, The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials, Rev. Mod. Phys., vol.55, pp.645-705, 1983.
30. C. Jungemann, S. Keith, F.M. Bufler, and B. Meinerzhagen, Effects of band structure and phonon models on hot electron transport in silicon, Electrical Engineering, vol.79, pp.99-101, 1996.
31. F.M. Bufler, Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe, Dissertation, Universität Bremen, Bremen, pp.881-884, 1997.
32. T. Kunikiyo, M. Takenaka, M. Morifuji, K. Taniguchi, and C. Hamaguchi, A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation, J. Appl. Phys., vol.79, pp.7718-7725, 1996.
33. M.V. Fischetti, N. Sano, S.E. Laux, and K. Natori, Fullband-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs, IEEE J. Tech. Comp. Aided Design, no.3, 1997.
34. E. Sangiorgi, B. Riccö, and F. Venturi, MOS2: An efficient monte carlo simulator for MOS devices, IEEE Trans. Comput.-Aided Des. Integrated Circuits i: Syst., vol.7, pp.259-271, 1988.
35. W. Brauer and H.W. Streitwolf, Theoretische Grundlagen der Halbleiterphysik, Vicweg, Braunschweig, 2nd edition, 1977.
36. S. Jallepalli, M. Rashed, W.-K. Shih, C.M. Maziar, and A.F. Tasch, Jr., A full-band Monte Carlo model for hole transport in silicon, J. Appl. Phys., vol.81, pp.2250-2255, 1997.
37. P. Graf, F.M. Bufler, B. Meinerzhagen, and C. Jungemann, A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs, IEDM Tech. Dig., pp.881-884, 1997.
38. N.G. van Kämpen, Stochastic Process in Physics and Chemistry, North-Holland Publishing, Amsterdam, 1981.
39. Y. Tagawa and Y. Awano, Enhanced hole drift velocity in sub-O.l/an Si devices caused by anisotropic velocity overshoot, Proc. IWCE, Osaka (Japan), pp.206-209, 1998.
40. R. Stratton, Diffusion of hot and cold electrons in semiconductor barriers, Phys. Rev., vol.126, pp.2002-2013, 19G2.
41. C. Jungemann, M. Bartels, S. Keith, and B. Meinerzhagen, Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in si and sige based on a full-band structure, Proc. IWCE, Osaka (Japan), pp.104107, 1998.
42. C. Jungemann, S. Decker, R. Thoma, W.-L. Engl, and H. Goto, Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation, IEEE J. Tech. Comp. Aided Design, no.2, 1997.
43. M.G. Gray, T.E. Booth, T.J.T. K\van, and CM. Snell, A multi-comb variance reduction scheme for Monte Carlo semiconductor simulators, IEEE Trans. Electron Devices, vol.45, pp.918-924, 1998.
44. C. Jungemann, S. Yamaguchi, and H. Goto, Convergence estimation for stationary ensemble Monte Carlo simulations, IEEE J. Tech. Comp. Aided Design, no.10, 1998.
45. R.S. Varga, Matrix Iterative Analysis, Series in Automatic Computation, Prentice-Hall, Englewood Cliffs, New Jersey, 1962.
46. H.-J. Peifer, Monte-Carlo Simulation des Hochenergietransports von Elektronen in submikron MOSStrukturen, Doctor thesis, RWTH Aachen, Aachen, Augustinus Buchhandlung, 1992.
47. E. Sangiorgi and M.R. Pinto, A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFET's, IEEE Trans. Electron Devices, vol.39, pp.356-361, 1992.
48. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration, IEEE Trans. Electron Devices, vol.41, pp.2357-2362, 1994.
49. S. Keith, F.M. Bufler, and B. Meinerzhagen, Full band Monte-Carlo device simulation of an 0.1/im n-channel MOSFET in strained silicon material, Proc. ESSDERC, Stuttgart, pp.200-203, Sept. 1997.
50. B. Neinhüs, S. Decker, P. Graf, F.M. Bufler, and B. Meinerzhagen, Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times, VLSI Design, vol.8, pp.387-391, 1998.
51. M. Lundstrom, Scattering theory of the short channel MOSFET, IEDM Tech. Dig., pp.387-390, 1996.