A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2213-2222

  Martinez, Antonio ^a   Bescond, Marc ^b   Barker, John R ^a   Svizhenko, Alexei ^c   Anantram, M P ^d   Millar, Campbell ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b IMEP LAHC   (France)

^c Silvaco Data Systems Inc   (United States)

^d UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Nanowire MOSFET; Nonequilibrium Green Function (NEGF); Stray charges; Surface roughness

Indexed keywords

ALGORITHMS; CURRENT VOLTAGE CHARACTERISTICS; GREEN'S FUNCTION; NANOWIRES; QUANTUM THEORY; SURFACE ROUGHNESS; THREE DIMENSIONAL;

NANO-MOSFETS; NANOWIRE MOSFET; NONEQUILIBRIUM GREEN FUNCTION (NEGF); REAL-SPACE QUANTUM-TRANSPORT SIMULATOR; RECURSIVE ALGORITHM; STRAY CHARGES;

MOSFET DEVICES;

EID: 38849209164     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902867     Document Type: Article

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