Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3063-3069

  Roy, Gareth ^b   Brown, Andrew R ^b   Adamu Lema, Fikru ^b,c   Roy, Scott ^b   Asenov, Asen ^a,b  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c Visual Numerics   (United Kingdom)

Author keywords

Intrinsic parameter fluctuations; MOSFETs; Numerical simulation

Indexed keywords

COMPUTER SIMULATION; QUANTUM THEORY; RANDOM PROCESSES; STATISTICAL METHODS; SURFACE ROUGHNESS;

DENSITY GRADIENT QUANTUM CORRECTIONS; INTRINSIC PARAMETER FLUCTUATIONS; LINE EDGE ROUGHNESS (LER); TOSHIBA (CO);

MOSFET DEVICES;

EID: 33947265310     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885683     Document Type: Article

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