3D Monte Carlo device simulation of NanoWire MOSFETs including quantum mechanical and strain effects

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 67-70

  Ghetti, Andrea ^a   Rideau, Denis ^b  

^a STMICROELECTRONICS   (Italy)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; NANOWIRES; SCHRODINGER EQUATION;

QUANTUM MECHANICAL CORRECTION; STRAIN EFFECTS;

MOSFET DEVICES;

EID: 42549119553     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282840     Document Type: Conference Paper

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