Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1558-1564

  Riolino, I ^a   Braccioli, M ^b   Lucci, L ^a   Palestri, P ^a   Esseni, D ^a   Fiegna, C ^b   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON GAS; ELECTROSTATICS; MICROSCOPIC EXAMINATION; MONTE CARLO METHODS; THREE DIMENSIONAL;

MULTI-SUBBAND MODEL; SEMICLASSICAL TRANSPORT SIMULATION APPROACH;

SOLID STATE PHYSICS;

EID: 36249012506     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.011     Document Type: Article

References (23)

1. Jacoboni C., and Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev Mod Phys 55 (1983) 645-705
2. Ando T., Fowler A.B., and Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys 54 2 (1982) 437-672
3. Ferry DK, Akis R, Vasileska D. Quantum Effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices. In: IEDM Technical Digest; 2000. p. 287-90.
4. Winstead B., and Ravaioli U. A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation. IEEE Trans Electron Devices 50 2 (2003) 440-446
5. Fischetti M.V., and Laux S.E. Monte Carlo study of electron transport in silicon inversion layers. Phys Rev B 48 (1993) 2244-2274
6. Jungemann C., Edmunds A., and Engl W.L. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid State Electron 36 11 (1993) 1529-1540
7. Gamiz F., Lopez-Villanueva J.A., Roldan J.B., Carceller J.E., and Cartujo P. Monte Carlo simulation of electron transoprt properties in extremely thin SOI MOSFETs. IEEE Trans Electron Devices 45 5 (1998) 1122-1126
8. Palestri P., Esseni D., Eminente S., Fiegna C., Sangiorgi E., Selmi L., et al. IEEE Trans Electron Devices 52 12 (2005) 2727-2735
9. Lucci L, Palestri P, Esseni D, Selmi L. Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration. In: IEDM Technical Digest; 2005. p. 631-34.
10. Palestri P., Eminente S., Esseni D., Fiegna C., Sangiorgi E., and Selmi L. An improved semiclassical Monte-Carlo approach for nano-scale MOSFET simulation. Solid State Elect 49 (2005) 727
11. Palestri P, Esseni D, Abramo A, Clerc R, Selmi L, Carrier Quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool. In: ESSDERC; 2003. p. 407.
12. Lucci L., Palestri P., Esseni D., and Selmi L. Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas. Solid State Electron. 49 9 (2005) 1529-1535
13. Fiegna C, Braccioli M, Brugger SC, Bufler FM, Dollfus P, Aubry-Fortuna V, Jungemann C, Meinerzhagen B, Palestri P, Galdin-Retailleau S, Sangiorgi E, Schenk A, Selmi L. Comparison of Monte Carlo transport models for nanometer-size MOSFETs. In: SISPAD; 2007. p. 57-60.
14. Takagi S., Toriumi A., Iwase M., and Tango H. On the universality of inversion-layer mobilty in Si MOSFETs. Part I - Effect of substrate impurity concentration. IEEE Trans Electron Devices 41 12 (1994) 2357-2362
15. 2-based Gate Stacks. In: IEDM; 2005. p. 623.
16. Gonzales T., and Pardo D. Physical models of ohmic contact for monte carlo device simulation. Solid State Electron 39 (1996) 555
17. Palestri P., Barin N., Esseni D., and Fiegna C. Stability of self-consistent Monte-Carlo simulations: Effects of the grid size and of the coupling scheme. IEEE Trans Electron Devices 53 6 (2006) 1433-1442
18. Palestri P., Barin N., Esseni D., and Fiegna C. Revised stability analysis of the non-linear poisson scheme in self-consistent Monte-Carlo device simulations. IEEE Trans Electron Devices 53 6 (2006) 1443-1451
19. Lundstrom M. Elementary scattering theory of the Si MOSFET. IEEE Electron Device Lett 18 (1997) 361-363
20. Fischetti M., Gámiz F., and Hänsch W. On the enhanced electron mobility in strained-Silicon inversion layers. J Appl Phys 92 12 (2002) 7320-7324
21. Ponton D, Lucci L, Palestri P, Esseni D, Selmi L, Assessment of the impact of biaxial strain on the drain current of decanometric n-MOSFET. In: ESSDERC; 2006. p. 166-69.
22. x MOS devices using Monte Carlo simulations. Solid State Electron 49 (2005) 1320-1329
23. Jungemann C., Subba N., Goo J.-S., Riccobene C., Xiang Q., and Meinerzhagen B. Investigation of strained Si/SiGe devices by MC simulation. Solid State Electron 48 (2004) 1417-1422