Calibration of hole scattering rates in silicon with a large set of experimental data including high voltage quantum yield, drain disturb and substrate hole injection

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 71-74

  Ghetti, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Calibration; Distribution functions; Feedback; Hot carriers; Impact ionization; Particle scattering; Silicon; Stress; Substrate hot electron injection; Voltage

Indexed keywords

CALIBRATION; CHARGE INJECTION; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; DISTRIBUTION FUNCTIONS; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON INJECTION; FEEDBACK; HOT CARRIERS; IONIZATION; QUANTUM YIELD; SEMICONDUCTOR DEVICES; SILICON; STRESSES;

DRAIN DISTURB; HOLE INJECTION; HOLE SCATTERING; HOT HOLE INJECTIONS; NON-VOLATILE MEMORY; PARTICLE SCATTERING; SCATTERING RATES; SUBSTRATE HOT-ELECTRON INJECTIONS;

IMPACT IONIZATION;

EID: 0842264495     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233640     Document Type: Conference Paper

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