On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2232-2242

  Querlioz, Damien ^a   Saint Martin, Jérôme ^a   Huet, Karim ^a   Bournel, Arnaud ^a   Aubry Fortuna, Valérie ^a   Chassat, Christophe ^a   Galdin Retailleau, Sylvie ^a   Dollfus, Philippe ^a  

^a CNRS   (France)

Author keywords

Monte Carlo (MC) methods; MOS devices; MOSFETs; Quantization; Quantum theory; Semiconductor device modeling; Wigner distributions

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; MONTE CARLO METHODS; NANOELECTRONICS; QUANTUM THEORY;

NANO-MOSFET; QUANTIZATION; QUANTUM TRANSPORT; SEMICONDUCTOR DEVICE MODELING; WIGNER DISTRIBUTIONS;

MOSFET DEVICES;

EID: 41749120574     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902713     Document Type: Article

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