A full self-consistent methodology for strain-induced effects characterization in silicon devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 992-995

  Fantini, P ^a   Ghetti, A ^a   Carnevale, G P ^a   Bonera, E ^b   Rideau, D ^c  

^a STMICROELECTRONICS   (Italy)

^b LABORATORIO MDM   (Italy)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); MONTE CARLO METHODS; SILICON; STRAIN; TRANSPORT PROPERTIES;

MECHANICAL STRESS; SHALLOW TRENCH ISOLATION (STI); SILICON DEVICES; TCAD SIMULATION;

SEMICONDUCTOR DEVICES;

EID: 33847763207     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. ITRS road map, 2004 Update.
2. E. Bonera, M. Fanciulli, and M. Mariani, Appl. Phys. Lett. 87, 111913 (2005).
3. E. Bonera, M. Fanciulli, G.P. Carnevale, to be submitted.
4. R.A. Bianchi et al., IEDM Tech. Dig., p.117, 2002.
5. M.V. Fischetti et al., J. Appl. Phys. 94, 1079 (2003).
6. www-device.eecs.berkeley.edu/~bsim3/bsim4.html
7. D. Rideau et al., to be submitted to IEEE Tr. Elect. Dev.
8. www.abinit.org
9. S.E Thompson et al., IEDM Tech. Dig., p. 221, 2004.