The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2703-2710

  Sampedro Matarín, Carlos ^a   Gámiz, Francisco ^a   Godoy, Andrés ^a   García Ruiz, Francisco J ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Monte Carlo (MC) methods; MOSFETs; Quantum well; Semiconductor device modeling; Silicon on insulator (SOI) technology

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; TENSORS;

EFFECTIVE CONDUCTION BAND-EDGE (ECBE) METHOD; MASS TENSOR; NANOSCALE STRUCTURE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33750578571     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882782     Document Type: Article

References (15)

1. European Network on Silicon on Insulator Technology, Devices, and Systems. [Online]. Available: http://www.eurosoi.org
2. H. Tsuchiya, A. Svizhenko, M. P. Anatram, M. Ogawa, and T. Miyoshi, "Comparison of non-equilibrium green's function and quantum-corrected Monte Carlo approaches in nano-MOS simulation," J. Comput. Electron., vol. 4, no. 1/2, pp. 35-38, Apr. 2005.
3. R. Ravishankar, G. Kathawala, U. Ravaioli, S. Hasan, and M. Lundstrom, "Comparison of Monte Carlo and NEGF simulation of double gate MOSFETs," J. Comput. Electron., vol. 4, no. 1/2, pp. 39-43, Apr. 2005.
4. International Roadmap for the Semiconductor Industry, 2004.
5. D. K. Ferry, S. Ramey, L. Shifren, and R. Akis, "The effective potential in device modeling: The good, the bad and the ugly," J. Comput. Electron., vol. 1, no. 1/2, pp. 59-65, Jul. 2002.
6. A. Asenov, A. R. Brown, and J. R. Watling, "Quantum corrections in the simulation of decanano MOSFETs," Solid State Electron., vol. 47, no. 7, pp. 1141-1145, Jul. 2003.
7. M. G. Ancona and G. J. Iafrate, "Quantum correction to the equation of state of an electron gas in a semiconductor," Phys. Rev. B, Condens. Matter, vol. 39, no. 13, pp. 9536-9540, May 1989.
8. T. W. Tang and B. Wu, "Quantum correction for the Monte Carlo simulation via the effective conduction-band-edge equation," Semicond. Sci. Technol., vol. 19, no. 1, pp. 54-60, Jan. 2004.
9. S. Jin, Y. J. Park, and H. S. Min, "Simulation of quantum effects in the nano-scale semiconductor device," J. Semicond. Technol. Sci., vol. 4, no. 1, pp. 32-40, Mar. 2004.
10. M. V. Fischetti and S. E. Laux, "Monte Carlo study of electron transport in silicon inversion layers," Phys. Rev. B, Condens. Matter, vol. 48, no. 4, pp. 2244-2274, Jul. 1993.
11. F. Gámiz, J. B. Roldán, J. A. López-Villanueva, P. Cartujo-Cassinello, and J. E. Carceller, "Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers," J. Appl. Phys., vol. 86, no. 12, pp. 6854-6863, Dec. 1999.
12. S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont, and J. R. Barker, "Complete Monte Carlo analysis of real short-channel compound FET's," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1644-1652, Aug. 1998.
13. Microsystems Research Laboratories, Massachusetts Institute of Technology. [Online]. Available: http://www-mtl.mit.edu/researchgroups/ Well/
14. F. Gámiz, J. A. López-Villanueva, J. A. Jiménez-Tejada, I. Melchor, and A. Palma, "A comprehensive study of Coulomb scattering in inversion layers," J. Appl. Phys., vol. 75, no. 2, pp. 924-934, Jan. 1994.
15. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, "Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance," IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 410-412, Sep. 1987.