Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 557-560

  Reggiani, Susanna ^a   Silvestri, Luca ^a   Cacciatori, Alessio ^b   Gnani, Elena ^a   Gnudi, Antonio ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF BRESCIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTRON DEVICES; MOSFET DEVICES; POWDERS; SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

COMPACT MODELING; EFFECTIVE CARRIER MOBILITY; GATE STACKS; MOSFETS; STRESS CONDITIONS;

CARRIER MOBILITY;

EID: 50249179163     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418999     Document Type: Conference Paper

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