Low-field electron mobility model for ultrathin-body SOI and double-gate MOSFETs with extremely small silicon thicknesses

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2204-2212

  Reggiani, Susanna ^a   Gnani, Elena ^a   Gnudi, Antonio ^a   Rudan, Massimo ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Mobility modeling; Silicon thickness dependencies; Silicon on insulator (SOI) MOSFETs; Ultrathin silicon thicknesses

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON MOBILITY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT;

LOW-FIELD CARRIER MOBILITY; LOW-FIELD ELECTRON MOBILITY; MOBILITY MODELING; SILICON THICKNESS DEPENDENCIES; ULTRATHIN SILICON THICKNESSES;

MOSFET DEVICES;

EID: 41749094302     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902899     Document Type: Article

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