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Volumn 22, Issue 1, 2001, Pages 35-37

Comparison of quantum-mechanical capacitance-voltage simulators

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; GATES (TRANSISTOR); POLYSILICON; QUANTUM THEORY; THICKNESS MEASUREMENT; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

EID: 0035124973     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.892436     Document Type: Article
Times cited : (81)

References (11)
  • 1
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    • Seiler et al., Eds. Woodbury, NY: AIP
    • J. R. Hauser and K. Ahmed, "Characterization of ultra-thin oxides using electrical C-V and I-V measurements," in Characterization and Metrology for ULSI Technology, Seiler et al., Eds. Woodbury, NY: AIP, 1998, pp. 235-239.
    • (1998) Characterization and Metrology for ULSI Technology , pp. 235-239
    • Hauser, J.R.1    Ahmed, K.2
  • 2
    • 0342723158 scopus 로고    scopus 로고
    • Single and multiband modeling of quantum electron transport through layered semiconductor devices
    • R. Lake et al., "Single and multiband modeling of quantum electron transport through layered semiconductor devices," J. Appl. Phys., vol. 81, pp. 7845-7869, 1997.
    • (1997) J. Appl. Phys. , vol.81 , pp. 7845-7869
    • Lake, R.1
  • 3
    • 0032662942 scopus 로고    scopus 로고
    • Modeling and characterization of quantization, polysilicon depletion and direct tunneling effects in MOSFET's with ultrathin oxides
    • S.-H. Lo, D. A. Buchanan, and Y. Taur, "Modeling and characterization of quantization, polysilicon depletion and direct tunneling effects in MOSFET's with ultrathin oxides," IBM J. Res. Develop., vol. 43, pp. 327-337, 1999.
    • (1999) IBM J. Res. Develop. , vol.43 , pp. 327-337
    • Lo, S.-H.1    Buchanan, D.A.2    Taur, Y.3
  • 5
    • 0342750568 scopus 로고    scopus 로고
    • Berkeley Device Group.. [Online].. Available: www.device.eecs.berkeley.edu/qmcv/html
  • 6
    • 0030289752 scopus 로고    scopus 로고
    • Gate capacitance attenuation in MOS devices with thin gate dielectrics
    • K. S. Krisch, J. D. Bude, and L. Manchanda, "Gate capacitance attenuation in MOS devices with thin gate dielectrics," IEEE Electron Device Lett., vol. 17, pp. 521-524, 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 521-524
    • Krisch, K.S.1    Bude, J.D.2    Manchanda, L.3
  • 7
    • 84886448116 scopus 로고    scopus 로고
    • Physical oxide thickness extraction using quantum mechanical simulation
    • C. Bowen et al., "Physical oxide thickness extraction using quantum mechanical simulation," in IEDM Tech. Dig., 1997, pp. 869-872.
    • (1997) IEDM Tech. Dig. , pp. 869-872
    • Bowen, C.1
  • 8
    • 0031177159 scopus 로고    scopus 로고
    • Thin oxide thickness extrapolation from capacitance-voltage measurements
    • S. V. Walstra and C.-T. Sah, "Thin oxide thickness extrapolation from capacitance-voltage measurements," IEEE Trans. Electron Devices, vol. 44, pp. 1136-1142, 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1136-1142
    • Walstra, S.V.1    Sah, C.-T.2
  • 10
    • 0032680955 scopus 로고    scopus 로고
    • Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
    • W. K. Henson et al., "Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors," IEEE Electron Device Lett., vol. 20, pp. 179-181, 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , pp. 179-181
    • Henson, W.K.1
  • 11
    • 85005976800 scopus 로고    scopus 로고
    • NEMO: General release of a new comprehensive quantum device simulator
    • D. K. Blanks et al., "NEMO: General release of a new comprehensive quantum device simulator," in Proc. IEEE 24th Int. Symp. Compound Semiconductors, 1998, pp. 639-642.
    • (1998) Proc. IEEE 24th Int. Symp. Compound Semiconductors , pp. 639-642
    • Blanks, D.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.