Comparison of Monte Carlo transport models for nanometer-size MOSFETs

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 57-60

  Fiegna, C ^a   Braccioli, M ^a   Brugger, S C ^b   Bufler, F M ^b,c   Dollfus, P ^d   Aubry Fortuna, V ^d   Jungemann, C ^e   Meinerzhagen, B ^f   Palestri, P ^g   Galdin Retailleau, S ^d   Sangiorgi, E ^a   Schenk, A ^b,c   Selmi, L ^g  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b ETH ZURICH   (Switzerland)

^c SYNOPSYS SWITZERLAND LLC   (Switzerland)

^d CNRS   (France)

^e BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^f TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^g UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MONTE CARLO METHODS; NANOTECHNOLOGY;

65-NM TECHNOLOGIES; DEVICE SIMULATORS; DIFFERENT TREATMENTS; IONIZED IMPURITY SCATTERING; IV CHARACTERISTICS; NANOMETER SIZE; SCREENING EFFECT; TRANSPORT MODELS;

MOSFET DEVICES;

EID: 84901311609     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_14     Document Type: Conference Paper

References (8)

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3. P. Palestri et al. Solid State Electron. 49, 727, 2005.
4. V. Aubry-Fortuna et al., Semicond. Sci. Tech. 21 422, 2006.
5. F. M. Butler et al. IEEE Trans. Electron Devices 50, 418, 2003.
6. C. Jungemann and B. Meinerzhagen, "Hierarchical Device Simulation: The Monte-Carlo Perspective", Springer, 2003.
7. S. C. Brugger, et al SIAM Journ. of Appl. Math. SIAP 66 (4), 1209, 2006.
8. C. Jungemann et al. Solid-State Electron. 36, 1529, 1993.