A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 440-446

  Winstead, Brian ^a   Ravaioli, Umberto ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Monte Carlo methods; MOSFET; Nanotechnology; Quantum effects; Schr dinger equation; Semiconductor device models

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MONTE CARLO METHODS; MOS CAPACITORS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; WAVE EQUATIONS;

QUANTUM CORRECTION;

MOSFET DEVICES;

EID: 0038056340     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.809431     Document Type: Article

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