Detailed modeling of sub- 100-nm MOSFETs based on Schrödinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1851-1858

  Curatola, Gilberto ^a   Doornbos, Gerben ^a   Loo, Josine ^a   Ponomarev, Youri V ^a   Iannaccone, Giuseppe ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

Ballistic transport; Drift diffusion (DD); MOS devices; Schr dinger equation

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); POLYSILICON; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MODELS;

BALLISTIC TRANSPORT; DRIFT-DIFFUSION; SCHRODINGER EQUATION;

MOSFET DEVICES;

EID: 23344432268     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852722     Document Type: Article

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