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ECS Transactions

Volumn 6, Issue 3, 2007, Pages 449-463

Microscopic mechanism of silicon thermal oxidation process

(4) Kagesbima, Hiroyuki a Uematsu, Masashi a Akiyama, Toru b Ito, Tomonori b

a NTT Basic Research Laboratories (Japan)

b MIE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; INSULATING MATERIALS; LOW-K DIELECTRIC; NITRIDES; PLASTIC FILMS; SILICA; SILICON NITRIDE; THERMOOXIDATION;

INTERFACIAL OXIDES; MICROSCOPIC MECHANISMS; OXYGEN DIFFUSION; OXYGEN REACTION; REACTION LIMITEDS; THERMAL OXIDATION PROCESS;

SILICON OXIDES;

EID: 41549084699 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2728813 Document Type: Conference Paper

Times cited : (2)

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