Theoretical study of excess Si emitted from Si-oxide/Si interfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 8223-8226

  Kageshima, Hiroyuki ^a   Uematsu, Masahi ^a   Akagi, Kazuto ^b   Tsuneyuki, Shinji ^b   Akiyama, Toru ^c   Shiraishi, Kenji ^d  

^a Bio Medical Informatics Research Center   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c MIE UNIVERSITY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Defects; First principles calculation; Interface; Interstitiels; Oxidation; Si; Si oxide

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; DEFECTS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); OXIDATION; SUBSTRATES;

ATOMIC-LAYER SUBSTRATES; FIRST-PRINCIPLES CALCULATION; INTERSTITIALS; SI OXIDE;

SILICON;

EID: 13644284553     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.8223     Document Type: Article

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