First-principles study of oxide growth on si(100) surfaces and at sio2/si(100) interfaces

Physical Review Letters

Volumn 81, Issue 26, 1998, Pages 5936-5939

  Kageshima, Hiroyuki ^a   Shiraishi, Kenji ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000835276     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.5936     Document Type: Article

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