Structural relaxation of SiO 2 /Si interfacial layer during annealing

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 221-224

  Awaji, Naoki ^a   Ohkubo, Satoshi ^a   Nakanishi, Toshiro ^a   Takasaki, Kanetake ^a   Komiya, Satoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Film density; Interfacial layer; Synchrotron radiation; Thermal annealing; X ray reflectivity

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DEFORMATION; DENSITY (SPECIFIC GRAVITY); RELAXATION PROCESSES; SEMICONDUCTING SILICON; SILICA; STRESS ANALYSIS; SYNCHROTRON RADIATION; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DIFFERENCE X RAY REFLECTIVITY (DXR) TECHNIQUES; GRAZING INCIDENCE X RAY DIFFRACTION ANALYSIS; INTERFACE STATE DENSITY; STRUCTURAL RELAXATION;

INTERFACES (MATERIALS);

EID: 0031548250     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80083-9     Document Type: Article

References (10)

1. N. Awaji, Y. Sugita, S. Ohkubo, T. Nakanishi, K. Takasaki, S. Komiya, Jpn. J. Appl. Phys. 34 (1995) L1013.
2. N. Awaji, S. Ohkubo, T. Nakanishi, Y. Sugita, K. Takasaki, S. Komiya, Jpn. J. Appl. Phys. 35 (1996) L67.
3. A.M. Stoneham, C.R.M. Grovenor, A. Cerezo, Phil. Mag. B 55 (1987) 201.
4. N.F. Mott, S. Rigo, F. Rochet, A.M. Stoneham, Phil. Mag. B 60 (1989) 189.
5. Y. Horii, H. Tomita, S. Komiya, Rev. Sci. Instr. 66 (1995) 1370.
6. E.P. EerNisse, Appl. Phys. Lett. 30 (1977) 290.
7. E.P. EerNisse, Appl. Phys. Lett. 35 (1979) 8.
8. B.J. Mrstik, A.G. Revesz, M. Ancona, H.L. Hughes, J. Electrochem. Soc. 134 (1987) 2020.
9. M. Kuhn, Solid-State Electron. 13 (1970) 873.
10. T. Nakanishi, Y. Sato, M. Okuno, K. Takasaki, Proceedings of the Symposium VLSI Technical Digest of Technical Papers, Japan, 1994, p. 45.