Designing of silicon effective quantum dots by using the oxidation-induced strain: A theoretical approach

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 337-341

  Shiraishi, Kenji ^a   Nagase, Masao ^a   Horiguchi, Seiji ^a   Kageshima, Hiroyuki ^a   Uematsu, Masashi ^a   Takahashi, Yasuo ^a   Murase, Katsumi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

OXIDATION-INDUCED STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033690681     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00336-7     Document Type: Article

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