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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7756-7759

Effect of nitrogen on diffusion in silicon oxynitride

(3) Uematsu, Masashi a Kageshima, Hiroyuki a Shiraishi, Kenji b

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Diffusion; Gate insulator; Silicon electronics; Silicon oxynitride

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; NITROGEN;

GATE INSULATOR; SILICON ELECTRONICS; SILICON OXYNITRIDE;

SILICON COMPOUNDS;

EID: 31544431983 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.7756 Document Type: Article

Times cited : (9)

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