Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Applied Physics Letters

Volumn 83, Issue 19, 2003, Pages 3897-3899

  Fukatsu, Shigeto ^a   Takahashi, Tomonori ^a   Itoh, Kohei M ^a   Uematsu, Masashi ^b   Fujiwara, Akira ^b   Kageshima, Hiroyuki ^b   Takahashi, Yasuo ^b   Shiraishi, Kenji ^c   Gösele, Ulrich ^d  

^a KEIO UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; MAGNETRON SPUTTERING; OXIDATION; PARTIAL DIFFERENTIAL EQUATIONS; SILICA; SILICON NITRIDE; SINGLE CRYSTALS;

ACCELERATION ENERGY;

SILICON;

EID: 0344945503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625775     Document Type: Article

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