Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 270-275

  Uematsu, Masashi ^a   Kageshima, Hiroyuki ^a   Fukatsu, Shigeto ^b   Itoh, Kohei M ^b   Shiraishi, Kenji ^c   Otani, Minoru ^d   Oshiyama, Atsushi ^c  

^a NTT Basic Research Laboratories   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Boron; Diffusion; Silicon oxide; Stress

Indexed keywords

BORON; DIFFUSION; OXIDATION; SILICON; STRAIN; STRESS ANALYSIS; SUBSTRATES;

CORRELATED DIFFUSION; SILICON OXIDE; THERMAL OXIDATION;

THIN FILMS;

EID: 33646107629     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.118     Document Type: Article

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