Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Ming, Zhao ^a   Nakajima, Kaoru ^a   Suzuki, Motofumi ^a   Kimura, Kenji ^a   Uematsu, Masashi ^b   Torii, Kazuyoshi ^c   Kamiyama, Satoshi ^c   Nara, Yasuo ^c   Yamada, Keisaku ^d  

^a KYOTO UNIVERSITY   (Japan)

^b Bio Medical Informatics Research Center   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; GRAIN GROWTH; HAFNIUM COMPOUNDS; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRESSES;

COMPOSITIONAL DEPTH; SI EMISSION; SIO2 LAYERS; SURFACE ACCUMULATION;

SILICON COMPOUNDS;

EID: 33646170324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195101     Document Type: Article

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