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Volumn 4, Issue , 2006, Pages 584-587
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Theoretical study on atomic structures of thermally grown silicon oxide/silicon interfaces
c
MIE UNIVERSITY
(Japan)
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Author keywords
Density functional calculations; Oxidation; Silicon; Silicon oxide
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Indexed keywords
GROWTH (MATERIALS);
OXIDATION;
PROBABILITY DENSITY FUNCTION;
QUARTZ;
SILICON;
SILICON COMPOUNDS;
DENSITY FUNCTIONAL CALCULATIONS;
FIRST-PRINCIPLES CALCULATIONS;
INTERFACIAL ATOMIC STRUCTURES;
SILICON OXIDE;
INTERFACES (MATERIALS);
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EID: 33747173984
PISSN: 13480391
EISSN: 13480391
Source Type: Journal
DOI: 10.1380/ejssnt.2006.584 Document Type: Conference Paper |
Times cited : (15)
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References (14)
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