Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3674-3676

  Takahashi, Tomonori ^a   Fukatsu, Shigeto ^a   Itoh, Kohei M ^a   Uematsu, Masashi ^b   Fujiwara, Akira ^b   Kageshima, Hiroyuki ^b   Takahashi, Yasuo ^b   Shiraishi, Kenji ^c  

^a KEIO UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); ISOTOPES; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

SELF-DIFFUSION;

SILICA;

EID: 0037445015     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1554487     Document Type: Article

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