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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 B, 2003, Pages

The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2

(8) Fukatsu, Shigeto a Takahashi, Tomonori a Itoh, Kohei M a Uematsu, Masashi b Fujiwara, Akira b Kageshima, Hiroyuki b Takahashi, Yasuo b Shiraishi, Kenji c

a KEIO UNIVERSITY (Japan)

b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Gate Insulator; Self diffusion; Silicon dioxide; Silicon electronics

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; ISOTOPES; OXYGEN; PARTIAL PRESSURE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON WAFERS;

GATE INSULATOR; SELF-DIFFUSION; SILICON ELECTRONICS;

SILICA;

EID: 1242332961 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1492 Document Type: Article

Times cited : (19)

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