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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 694-699

Transport mechanism of interfacial network forming atoms during silicon oxidation

(6) Kageshima, Hiroyuki a Uematsu, Masahi a Akagi, Kazuto b Tsuneyuki, Shinji b Akiyama, Toru c Shiraishi, Kenji d

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF TOKYO (Japan)

c MIE UNIVERSITY (Japan)

d UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Defects; First principles calculation; Interface; Oxidation; Si; Si oxide; Transformation

Indexed keywords

CRYSTAL DEFECTS; INTERFACES (MATERIALS); SILICON; STRAIN;

SI OXIDE; TRANSFORMATION;

OXIDATION;

EID: 32244445293 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.45.694 Document Type: Article

Times cited : (17)

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