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Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

Oxidation simulation of (111) and (100) silicon substrates based on the interfacial silicon emission model

(3) Uematsu, Masashi a Kageshima, Hiroyuki a Shiraishi, Kenji a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MOLECULAR ORIENTATION; OXIDATION; SUBSTRATES;

INTERFACIAL SILICON EMISSION MODELS;

SILICON;

EID: 0034316308 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l1135 Document Type: Article

Times cited : (27)

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