Theoretical study of the band offset at silicon-oxide/silicon interfaces with interfacial defects

Surface Science

Volumn 407, Issue 1-3, 1998, Pages 133-139

  Kageshima, Hiroyuki ^a   Shiraishi, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Density functional calculations; Electrical transport; Semiconductor insulator interfaces; Silicon; Silicon oxides

Indexed keywords

ANNEALING; BAND STRUCTURE; HYDROGEN; HYDROGEN BONDS; MOS DEVICES; SILICON; SILICON COMPOUNDS;

BAND OFFSET EVALUATION METHOD; DENSITY FUNCTIONAL CALCULATIONS; ELECTRICAL TRANSPORT; INTERFACIAL DEFECTS;

INTERFACES (MATERIALS);

EID: 0032097129     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00157-5     Document Type: Article

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