A first-principles study of O2 incorporation and its diffusion in compressively strained high-density silicon oxides

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 311-314

  Akiyama, Toru ^a   Kawamoto, Keiichi ^a   Kageshima, Hiroyuki ^b   Uematsu, Masashi ^b   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Density functional calculations; Diffusion; Oxidation; Silicon oxide

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; MICROSCOPIC EXAMINATION; OXIDATION; OXYGEN; STRAIN RATE;

FIRST-PRINCIPLES; HIGH-DENSITY SILICON OXIDES; OXIDATION-INDUCED STRAIN; OXIDE DENSITY;

SILICON COMPOUNDS;

EID: 33646094953     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.114     Document Type: Article

References (22)

1. Mizuno T., Takagi S., Sugiyama N., Satake H., Kurobe A., and Toriumi A. IEEE Electron Device Lett. 21 (2000) 230
2. Takahashi Y., Namatsu H., Kurihara K., Iwadate K., Nagase M., and Murase K. IEEE Trans. Electron Devices 43 (1996) 121
3. Nagase M., Fujiwara A., Yamasaki K., Takahashi Y., Murase K., and Kurihara K. Microelectron. Eng. 41/42 (1998) 527
4. Heidemeyer H., Single C., Zhou F., Prins F.E., Kern D.P., and Plies E. J. Appl. Phys. 87 (2000) 4580
5. Deal B.E., and Grove A.S. J. Appl. Phys. 36 (1965) 3770
6. Massoud H.Z., Plummer J.D., and Irene E.A. J. Electrochem. Soc. 132 (1985) 1745
7. Umimoto H., Odanaka S., and Nakao I. IEEE Electron Device Lett. 10 (1989) 330
8. Sutardja P., and Oldham W.G. IEEE Trans. Electron Devices 36 (1989) 2415
9. C.S. Rafferty, PhD thesis, Department of Electrical Engineering, Stanford University, 1990.
10. Uematsu M., Kageshima H., Shiraishi K., Nagase M., Horiguchi S., and Takahashi Y. Solid-State Electron. 48 (2004) 1073
11. Akiyama T., Kageshima H., Uemasu M., and Ito T. Jpn. J. Appl. Phys. 44 (2005) 742
12. Hamann D.R. Phys. Rev. Lett. 81 (1998) 3447
13. Orellana W., da Silva A.J.R., and Fazzio A. Phys. Rev. Lett. 87 (2001) 155901
14. Bakos T., Rashkeev S.N., and Pantelides S.T. Phys. Rev. Lett. 88 (2002) 55508
15. Perdew J.P., Burke K., and Ernzerhof M. Phys. Rev. Lett. 77 (1996) 3865
16. Troullier N., and Martins J.L. Phys. Rev., B 43 (1991) 1993
17. Vanderbilt D. Phys. Rev., B 41 (1990) 7892
18. Yamauchi J., Tsukada M., Watanabe S., and Sugino O. Phys. Rev., B 54 (1996) 5586
19. Hemley R.J., Jephcoat A.P., Mao H.K., Ming L.C., and Manghnani M.H. Nature 334 (1988) 52
20. Tsuneyuki S., Tsukada M., Aoki H., and Matsui Y. Nature 339 (1989) 209
21. Jeong S., and Oshiyama A. Phys. Rev. Lett. 81 (1998) 5366
22. Taniguchi K., Tanaka M., Hamaguchi C., and Imai K. J. Appl. Phys. 67 (1990) 2195