Mechanism of oxide deformation during silicon thermal oxidation

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 407-410

  Kageshima, H ^a   Uematsu, M ^a   Akagi, K ^b   Tsuneyuki, S ^b   Akiyama, T ^c   Shiraishi, K ^d  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c MIE UNIVERSITY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

First principles calculation; Interface; Oxidation; Silicon oxide

Indexed keywords

DEFORMATION; FILMS; INTERFACES (MATERIALS); OXIDATION; OXIDES; POINT DEFECTS; SEMICONDUCTING SILICON;

ENERGETICS; FIRST-PRINCIPLES CALCULATION; SILICON OXIDE;

CRYSTAL DEFECTS;

EID: 33645149361     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.105     Document Type: Conference Paper

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