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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7837-7842

Effect of Si/SiO 2 interface on silicon and boron diffusion in thermally grown SiO 2

(6) Fukatsu, Shigeto a Itoh, Kohei M a Uematsu, Masashi b Kageshima, Hiroyuki b Takahashi, Yasuo a,d Shiraishi, Kenji c

a KEIO UNIVERSITY (Japan)

b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

d HOKKAIDO UNIVERSITY (Japan)

Author keywords

Gate insulator; Self diffusion; Silicon dioxide; Silicon electronics

Indexed keywords

BORON DIFFUSION; GATE INSULATOR; SELF-DIFFUSION; SILICON ELECTRONICS;

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; DIFFUSION; FLUORINE; HETEROJUNCTIONS; INTERFACES (MATERIALS); ION IMPLANTATION; NUMERICAL ANALYSIS; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE;

SILICA;

EID: 12844262198 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.7837 Document Type: Conference Paper

Times cited : (17)

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