Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Horiguchi, S ^a   Nagase, M ^a   Shiraishi, K ^a   Kageshima, H ^a   Takahashi, Y ^a   Murase, K ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Atomic force microscope; Effective potential; First principles calculation; Pattern dependent oxidation; Silicon single electron transistor; Strain effect; Stress effect

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; COMPRESSIVE STRESS; NUMERICAL METHODS; OXIDATION; SEMICONDUCTING SILICON;

SINGLE ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0035862495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l29     Document Type: Article

References (15)