The effect of chlorine on silicon oxidation: Simulation based on the interfacial silicon emission model

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2217-2218

  Uematsu, M ^a   Kageshima, H ^a   Shiraishi, K ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Chlorine; Diffusion; Interfacial silicon emission; Oxidation; Silicon; Simulation

Indexed keywords

CHLORINE; COMPUTER SIMULATION; INTERFACES (MATERIALS); OXIDATION; OXYGEN; SUBSTRATES;

INTERFACIAL SILICON EMISSION; SILICON OXIDATION;

SILICON;

EID: 0035302004     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2217     Document Type: Article

References (13)