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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2455-2458

Interfacial silicon emission in dry oxidation-the effect of H and Cl

(3) Uematsu, Masashi a Kageshima, Hiroyuki a Shiraishi, Kenji b

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Chlorine; Diffusion; Hydrogen; Interfacial silicon emission; Oxidation; Silicon; Simulation

Indexed keywords

CHLORINE; COMPUTER SIMULATION; DIFFUSION; HYDROGEN; OXIDATION;

DRY OXIDATION; INTERFACIAL SILICON EMISSION; OXIDE THICKNESS;

SILICON;

EID: 32444431994 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2455 Document Type: Article

Times cited : (7)

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