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Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 229-234

Microscopic mechanism of thermal silicon oxide growth

(3) Uematsu, M a Kageshima, H a Shiraishi, K a

a Bio Medical Informatics Research Center (Japan)

Author keywords

Growth rate; Initial enhanced oxidation; Interstitials; Oxidation; Silicon; Theory

Indexed keywords

COMPUTER SIMULATION; CONTINUUM MECHANICS; INTERFACES (MATERIALS); OXIDATION; STRAIN; THIN FILMS;

INITIAL ENHANCED OXIDATION;

SILICA;

EID: 0036577657 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(02)00199-4 Document Type: Conference Paper

Times cited : (32)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.