Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 1073-1078

  Uematsu, M ^a   Kageshima, H ^a   Shiraishi, K ^b   Nagase, M ^a   Horiguchi, S ^a   Takahashi, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Oxidation induced strain and stress; Pattern dependent oxidation; Silicon; Silicon on insulator; Simulation; Single electron transistors

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ENERGY GAP; FINITE ELEMENT METHOD; NANOSTRUCTURED MATERIALS; OXIDATION; STRESS ANALYSIS; SUBSTRATES; TRANSISTORS;

OXIDATION-INDUCED STRAIN AND STRESS; PATTERN-DEPENDENT OXIDATION; SINGLE-ELECTRON TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1442287281     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.019     Document Type: Article

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