Simulation of correlated diffusion of Si and B in thermally grown SiO 2

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5513-5519

  Uematsu, Masashi ^a   Kageshima, Hiroyuki ^a   Takahashi, Yasuo ^a,d   Fukatsu, Shigeto ^b   Itoh, Kohei M ^b   Shiraishi, Kenji ^c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; MATHEMATICAL MODELS; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICA;

ATOMIC EXCHANGE INTERACTIONS; DIFFUSION COEFFICIENTS; GATE DIELECTRICS; IMPLANTATION ENERGY;

SILICON;

EID: 9944242789     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806253     Document Type: Article

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