Selectivity for O-adsorption position on dihydride Si(100) surfaces

Applied Surface Science

Volumn 159, Issue , 2000, Pages 14-18

  Kageshima, Hiroyuki ^a   Shiraishi, Kenji ^a   Ikeda, Hiroya ^b   Zaima, Shigeaki ^b   Yasuda, Yukio ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; FERMI LEVEL; GAS ADSORPTION; OXYGEN; SILANES; THERMOOXIDATION;

HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPERS (HREELS); HYDROGEN TERMINATION; SILICON DIHYDRIDES;

SEMICONDUCTING SILICON;

EID: 0034207157     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00064-7     Document Type: Article

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