Correlated diffusion of silicon and boron in thermally grown SiO 2

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 221-223

  Uematsu, Masashi ^a   Kageshima, Hiroyuki ^a   Takahashi, Yasuo ^a,d   Fukatsu, Shigeto ^b   Itoh, Kohei M ^b   Shiraishi, Kenji ^c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; ION IMPLANTATION; MASS SPECTROMETRY; OXIDATION; SILICON; VISCOSITY;

DIFFUSIVITY; SELF-DIFFUSION; THERMAL PROCESSING;

SILICA;

EID: 3242884085     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771811     Document Type: Article

References (15)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, V. Takahashi, K. Shiraishi, and U. Gösele, Appl. Phys. Lett. 83, 3897 (2003).
3. M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Gösele, Appl. Phys. Lett. 84, 876 (2004).
4. R. H. Doremus, J. Appl. Phys. 92, 7619 (2002).
5. T. Takahashi, S. Fukatsu, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi, J. Appl. Phys. 93, 3674 (2003).
6. R. B. Fair, IEEE Electron Device Lett. 17, 242 (1996).
7. R. B. Fair, J. Electrochem. Soc. 144, 708 (1997).
8. M. Otani, K. Shiraishi, and A. Oshiyama, Phys. Rev. B 68, 184112 (2003).
9. M. Uematsu, J. Appl. Phys. 82, 2228 (1997).
10. M. Uematsu, Jpn. J. Appl. Phys., Part 2 36, L982 (1997).
11. T. Aoyama, H. Tashiro, and K. Suzuki, J. Electrochem. Soc. 146, 1879 (1999).
12. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, and H. W. Pötzl, IEEE Trans. Electron Devices 32, 156 (1985).
13. T. Aoyama, H. Arimoto, and K. Horiuchi, Jpn. J. Appl. Phys., Part 1 40, 2685 (2001).
14. H. Eyring, J. Chem. Phys. 4, 283 (1936).
15. A. J. Ikushima, T. Fujiwara, and K. Saito, J. Appl. Phys. 88, 1201 (2000).