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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

Universal theory of Si oxidation rate and importance of interfacial Si emission

(3) Kageshima, Hiroyuki a Shiraishi, Kenji a Uematsu, Masashi a

a Bio Medical Informatics Research Center (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIELECTRIC PROPERTIES; INTERFACES (MATERIALS); NITRIDING; OXIDATION; OXIDES; SEMICONDUCTOR GROWTH;

DEAL-GROV THEORY; OXYNITRIDATION;

SEMICONDUCTING SILICON;

EID: 0033350182 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l971 Document Type: Article

Times cited : (164)

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