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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5197-5200

Oxidation simulation of heavily phosphorus-doped silicon based on the interfacial silicon emission model

(3) Uematsu, Masashi a Kageshima, Hiroyuki a Shiraishi, Kenji a,b

a NTT Basic Research Laboratories (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Diffusion; Interfacial silicon emission; Oxidation; Phosphorus; Silicon; Simulation

Indexed keywords

ATOMS; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION; ELECTRON EMISSION; ENERGY GAP; FERMI LEVEL; MATHEMATICAL MODELS; OXIDATION; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBSTRATES;

DRY OXIDATION; INTERFACIAL SILICON EMISSION MODEL; SELF-DIFFUSIVITY;

SEMICONDUCTING SILICON;

EID: 0035456886 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5197 Document Type: Article

Times cited : (6)

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