Simulation of high-pressure oxidation of silicon based on the interfacial silicon emission model

Japanese journal of applied physics

Volumn 39, Issue 10 A, 2000, Pages

  Uematsu, Masashi ^a   Kageshima, Hiroyuki ^a   Shiraishi, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRON EMISSION; HIGH PRESSURE EFFECTS IN SOLIDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; OXYGEN;

INTERFACIAL SILICON EMISSION MODEL; OXIDANT SOLUBILITY;

SEMICONDUCTING SILICON;

EID: 0034292261     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l952     Document Type: Article

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